Volume 3, Number 2, pp. 55 - 59
L.G. Aptsiauri,1 T.G. Andronikashvili,1 T.V. Butkhuzi and M.M. Sharvashidze
Semiconductor Materials Science Laboratory, Tbilisi State University,
380060 Tbilisi, Georgia
1P. Melikishvili Institute of Physical and Organic Chemistry,
Georgian Academy of Sciences, Tbilisi, Georgia
Intrinsic defect hole conductivity obtained by ion
implantation in ZnS and ZnO
It is hypothesized that p-type conductivity in ZnS
and ZnO semiconductors depends on a critical temperature (Ts). It is impossible to obtain
p-type conductivity by treatment above this temperature. Allowing for this
factor, both Ar+ inert gas and S+ ions were implanted
in ZnS and ZnO n-type samples (r » 102 to 103 W cm) at an energy E = 300 keV and at an implantation dose D
= 1014 to 1016 cm–2. The range of current
density was J = 0.3 to 5 mA/cm2 and the temperature range was
300 to 500 °C. ZnS p-type samples were obtained by implantation of
Ar+ and S+ ions (0.3 to 0.5 mA/cm2) under
subsequent heat treatment (T » 420 to 460 °C) in S2-saturated vapour (r » 105 – 107
W cm and ρ ≈ 104
– 106 W
cm for implantation of Ar+ and S+ ions were implanted
in ZnS and ZnO n-type samples (r » 102 to 103 W cm) at an energy E = 300 keV
ions, respectively). When ZnO was implanted with Ar+ and S+
ions (0.3 to 0.5 mA/cm2) n-type samples were obtained with r » 109 – 1010
W cm and r » 1010 – 1011
W cm respectively (by
heat treatment in O2 at T = 300 to 350 °C).
Keywords: implantation, quasiepitaxy, ZnO, ZnS